Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Makoto Uchigasaki*, Kenichi Tomiki, Takefumi Kamioka, Eiji Nakayama, Takanobu Watanabe, Iwao Ohdomari

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.

本文言語English
ページ(範囲)L313-L314
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
8-11
DOI
出版ステータスPublished - 2005 6月 13

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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