Si nano-photodiode with a surface plasmon antenna

Tsutomu Ishi*, Junichi Fujikata, Kikuo Marita, Toshio Baba, Keishi Ohashi

*この研究の対応する著者

研究成果: Article査読

300 被引用数 (Scopus)

抄録

Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.

本文言語English
ページ(範囲)L364-L366
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
12-15
DOI
出版ステータスPublished - 2005 6 24
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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