Si nano-photodiode with a surface plasmon antenna

Tsutomu Ishi, Junichi Fujikata, Kikuo Marita, Toshio Baba, Keishi Ohashi

研究成果: Article

293 引用 (Scopus)

抜粋

Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
発行部数12-15
DOI
出版物ステータスPublished - 2005
外部発表Yes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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