SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c

Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu, Kenichi Iguchi, Haruo Nakazawa

研究成果: Conference contribution

抄録

A SiC-SiC temporary bonding compatible with rapid thermal annealing at \sim 1000^{\circ } \mathrm{C} has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding was dramatically weakened and the de-bonding could be achieved at the interface. The mechanisms of this temporary bonding method has been investigated through interface analyses.

本文言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版ステータスPublished - 2019 5 1
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
国/地域Japan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • プロセス化学およびプロセス工学
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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