SiC wafer bonding by modified suface activated bonding method

Fengwen Mu, Tadatomo Suga, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.

本文言語English
ホスト出版物のタイトルProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
出版社IEEE Computer Society
ページ数1
ISBN(印刷版)9781479952618
DOI
出版ステータスPublished - 2014 1月 1
外部発表はい
イベント2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan
継続期間: 2014 7月 152014 7月 16

出版物シリーズ

名前Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
国/地域Japan
CityTokyo
Period14/7/1514/7/16

ASJC Scopus subject areas

  • ろ過および分離

フィンガープリント

「SiC wafer bonding by modified suface activated bonding method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル