SiC wafer bonding using surface activation method for power device

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi

研究成果: Conference contribution

抄録

This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.

元の言語English
ホスト出版物のタイトル18th International Conference on Electronic Packaging Technology, ICEPT 2017
編集者Chenxi Wang, Yanhong Tian, Tianchun Ye
出版者Institute of Electrical and Electronics Engineers Inc.
ページ660-663
ページ数4
ISBN(電子版)9781538629727
DOI
出版物ステータスPublished - 2017 9 19
外部発表Yes
イベント18th International Conference on Electronic Packaging Technology, ICEPT 2017 - Harbin, China
継続期間: 2017 8 162017 8 19

出版物シリーズ

名前18th International Conference on Electronic Packaging Technology, ICEPT 2017

Conference

Conference18th International Conference on Electronic Packaging Technology, ICEPT 2017
China
Harbin
期間17/8/1617/8/19

Fingerprint

Wafer bonding
Chemical activation
Ion beams
Rapid thermal annealing
Oxidation
Chemical analysis

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

これを引用

Mu, F., Fujino, M., Suga, T., Iguchi, K., Nakazawa, H., & Takahashi, Y. (2017). SiC wafer bonding using surface activation method for power device. : C. Wang, Y. Tian, & T. Ye (版), 18th International Conference on Electronic Packaging Technology, ICEPT 2017 (pp. 660-663). [8046538] (18th International Conference on Electronic Packaging Technology, ICEPT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT.2017.8046538

SiC wafer bonding using surface activation method for power device. / Mu, Fengwen; Fujino, Masahisa; Suga, Tadatomo; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu.

18th International Conference on Electronic Packaging Technology, ICEPT 2017. 版 / Chenxi Wang; Yanhong Tian; Tianchun Ye. Institute of Electrical and Electronics Engineers Inc., 2017. p. 660-663 8046538 (18th International Conference on Electronic Packaging Technology, ICEPT 2017).

研究成果: Conference contribution

Mu, F, Fujino, M, Suga, T, Iguchi, K, Nakazawa, H & Takahashi, Y 2017, SiC wafer bonding using surface activation method for power device. : C Wang, Y Tian & T Ye (版), 18th International Conference on Electronic Packaging Technology, ICEPT 2017., 8046538, 18th International Conference on Electronic Packaging Technology, ICEPT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 660-663, 18th International Conference on Electronic Packaging Technology, ICEPT 2017, Harbin, China, 17/8/16. https://doi.org/10.1109/ICEPT.2017.8046538
Mu F, Fujino M, Suga T, Iguchi K, Nakazawa H, Takahashi Y. SiC wafer bonding using surface activation method for power device. : Wang C, Tian Y, Ye T, 編集者, 18th International Conference on Electronic Packaging Technology, ICEPT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 660-663. 8046538. (18th International Conference on Electronic Packaging Technology, ICEPT 2017). https://doi.org/10.1109/ICEPT.2017.8046538
Mu, Fengwen ; Fujino, Masahisa ; Suga, Tadatomo ; Iguchi, Kenichi ; Nakazawa, Haruo ; Takahashi, Yoshikazu. / SiC wafer bonding using surface activation method for power device. 18th International Conference on Electronic Packaging Technology, ICEPT 2017. 編集者 / Chenxi Wang ; Yanhong Tian ; Tianchun Ye. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 660-663 (18th International Conference on Electronic Packaging Technology, ICEPT 2017).
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abstract = "This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30{\%} stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.",
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AU - Takahashi, Yoshikazu

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