Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8

M. Numata, M. Kanamori, M. Sugiura, A. Fuwa

    研究成果: Conference contribution

    2 被引用数 (Scopus)

    抄録

    Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    本文言語English
    ホスト出版物のタイトルFirst International Conference on Processing Materials for Properties
    Place of PublicationWarrendale, PA, United States
    出版社Publ by Minerals, Metals & Materials Soc (TMS)
    ページ1249-1252
    ページ数4
    ISBN(印刷版)0873392566
    出版ステータスPublished - 1993
    イベントProceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA
    継続期間: 1993 11 71993 11 10

    Other

    OtherProceedings of the 1st International Conference on Processing Materials for Properties
    CityHonolulu, HI, USA
    Period93/11/793/11/10

    ASJC Scopus subject areas

    • 工学(全般)

    フィンガープリント

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