Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8

M. Numata, M. Kanamori, M. Sugiura, A. Fuwa

    研究成果: Conference contribution

    2 引用 (Scopus)

    抄録

    Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    元の言語English
    ホスト出版物のタイトルFirst International Conference on Processing Materials for Properties
    出版場所Warrendale, PA, United States
    出版者Publ by Minerals, Metals & Materials Soc (TMS)
    ページ1249-1252
    ページ数4
    ISBN(印刷物)0873392566
    出版物ステータスPublished - 1993
    イベントProceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA
    継続期間: 1993 11 71993 11 10

    Other

    OtherProceedings of the 1st International Conference on Processing Materials for Properties
    Honolulu, HI, USA
    期間93/11/793/11/10

    Fingerprint

    Chemical vapor deposition
    Silicon
    Reaction intermediates
    Scanning electron microscopy
    Surface reactions
    Crystal orientation
    Temperature
    X ray diffraction analysis
    Atmospheric pressure
    Argon
    Precipitates
    Quartz
    Flow rate
    Glass
    Hydrogen
    Substrates
    Gases

    ASJC Scopus subject areas

    • Engineering(all)

    これを引用

    Numata, M., Kanamori, M., Sugiura, M., & Fuwa, A. (1993). Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 First International Conference on Processing Materials for Properties (pp. 1249-1252). Warrendale, PA, United States: Publ by Minerals, Metals & Materials Soc (TMS).

    Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 . / Numata, M.; Kanamori, M.; Sugiura, M.; Fuwa, A.

    First International Conference on Processing Materials for Properties. Warrendale, PA, United States : Publ by Minerals, Metals & Materials Soc (TMS), 1993. p. 1249-1252.

    研究成果: Conference contribution

    Numata, M, Kanamori, M, Sugiura, M & Fuwa, A 1993, Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 First International Conference on Processing Materials for Properties. Publ by Minerals, Metals & Materials Soc (TMS), Warrendale, PA, United States, pp. 1249-1252, Proceedings of the 1st International Conference on Processing Materials for Properties, Honolulu, HI, USA, 93/11/7.
    Numata M, Kanamori M, Sugiura M, Fuwa A. Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 : First International Conference on Processing Materials for Properties. Warrendale, PA, United States: Publ by Minerals, Metals & Materials Soc (TMS). 1993. p. 1249-1252
    Numata, M. ; Kanamori, M. ; Sugiura, M. ; Fuwa, A. / Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 First International Conference on Processing Materials for Properties. Warrendale, PA, United States : Publ by Minerals, Metals & Materials Soc (TMS), 1993. pp. 1249-1252
    @inproceedings{edec3006a35f41ca9adf2c8d077a55b9,
    title = "Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8",
    abstract = "Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.",
    author = "M. Numata and M. Kanamori and M. Sugiura and A. Fuwa",
    year = "1993",
    language = "English",
    isbn = "0873392566",
    pages = "1249--1252",
    booktitle = "First International Conference on Processing Materials for Properties",
    publisher = "Publ by Minerals, Metals & Materials Soc (TMS)",

    }

    TY - GEN

    T1 - Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8

    AU - Numata, M.

    AU - Kanamori, M.

    AU - Sugiura, M.

    AU - Fuwa, A.

    PY - 1993

    Y1 - 1993

    N2 - Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    AB - Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    UR - http://www.scopus.com/inward/record.url?scp=0027810712&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0027810712&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0027810712

    SN - 0873392566

    SP - 1249

    EP - 1252

    BT - First International Conference on Processing Materials for Properties

    PB - Publ by Minerals, Metals & Materials Soc (TMS)

    CY - Warrendale, PA, United States

    ER -