Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8

M. Numata, M. Kanamori, M. Sugiura, A. Fuwa

    研究成果: Conference contribution

    2 引用 (Scopus)

    抜粋

    Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    元の言語English
    ホスト出版物のタイトルFirst International Conference on Processing Materials for Properties
    出版場所Warrendale, PA, United States
    出版者Publ by Minerals, Metals & Materials Soc (TMS)
    ページ1249-1252
    ページ数4
    ISBN(印刷物)0873392566
    出版物ステータスPublished - 1993
    イベントProceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA
    継続期間: 1993 11 71993 11 10

    Other

    OtherProceedings of the 1st International Conference on Processing Materials for Properties
    Honolulu, HI, USA
    期間93/11/793/11/10

    ASJC Scopus subject areas

    • Engineering(all)

    フィンガープリント Silicon chemical vapor deposition from Si<sub>2</sub>Cl<sub>6</sub> and Si<sub>3</sub> Cl<sub>8</sub>' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Numata, M., Kanamori, M., Sugiura, M., & Fuwa, A. (1993). Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 First International Conference on Processing Materials for Properties (pp. 1249-1252). Publ by Minerals, Metals & Materials Soc (TMS).