Silicon electrodeposition in a water-soluble KF–KCl molten salt: Utilization of SiCl4 as Si source

Kouji Yasuda, Kazuma Maeda, Rika Hagiwara, Takayuki Homma, Toshiyuki Nohira

    研究成果: Article

    7 引用 (Scopus)

    抄録

    The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol%) after the introduction of SiCl4 to demonstrate a new production method for solar cell substrates. Gaseous SiCl4 was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl4 exceeded 80% even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm−2 for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol% SiCl4. Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K2SiF6. The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits.

    元の言語English
    ページ(範囲)D67-D71
    ジャーナルJournal of the Electrochemical Society
    164
    発行部数2
    DOI
    出版物ステータスPublished - 2017 1 1

    Fingerprint

    Silicon
    Electrodeposition
    Molten materials
    Salts
    Water
    Dissolution
    Substrates
    Fluorides
    Electrolysis
    Eutectics
    Anions
    Solar cells
    Negative ions
    Deposits
    Gases
    Vapors
    Chemical analysis

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Surfaces, Coatings and Films
    • Electrochemistry
    • Materials Chemistry

    これを引用

    Silicon electrodeposition in a water-soluble KF–KCl molten salt : Utilization of SiCl4 as Si source. / Yasuda, Kouji; Maeda, Kazuma; Hagiwara, Rika; Homma, Takayuki; Nohira, Toshiyuki.

    :: Journal of the Electrochemical Society, 巻 164, 番号 2, 01.01.2017, p. D67-D71.

    研究成果: Article

    Yasuda, Kouji ; Maeda, Kazuma ; Hagiwara, Rika ; Homma, Takayuki ; Nohira, Toshiyuki. / Silicon electrodeposition in a water-soluble KF–KCl molten salt : Utilization of SiCl4 as Si source. :: Journal of the Electrochemical Society. 2017 ; 巻 164, 番号 2. pp. D67-D71.
    @article{e61bdb282b5049f58cf56e0dbeeacf5d,
    title = "Silicon electrodeposition in a water-soluble KF–KCl molten salt: Utilization of SiCl4 as Si source",
    abstract = "The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol{\%}) after the introduction of SiCl4 to demonstrate a new production method for solar cell substrates. Gaseous SiCl4 was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl4 exceeded 80{\%} even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm−2 for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol{\%} SiCl4. Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K2SiF6. The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits.",
    author = "Kouji Yasuda and Kazuma Maeda and Rika Hagiwara and Takayuki Homma and Toshiyuki Nohira",
    year = "2017",
    month = "1",
    day = "1",
    doi = "10.1149/2.0641702jes",
    language = "English",
    volume = "164",
    pages = "D67--D71",
    journal = "Journal of the Electrochemical Society",
    issn = "0013-4651",
    publisher = "Electrochemical Society, Inc.",
    number = "2",

    }

    TY - JOUR

    T1 - Silicon electrodeposition in a water-soluble KF–KCl molten salt

    T2 - Utilization of SiCl4 as Si source

    AU - Yasuda, Kouji

    AU - Maeda, Kazuma

    AU - Hagiwara, Rika

    AU - Homma, Takayuki

    AU - Nohira, Toshiyuki

    PY - 2017/1/1

    Y1 - 2017/1/1

    N2 - The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol%) after the introduction of SiCl4 to demonstrate a new production method for solar cell substrates. Gaseous SiCl4 was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl4 exceeded 80% even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm−2 for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol% SiCl4. Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K2SiF6. The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits.

    AB - The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol%) after the introduction of SiCl4 to demonstrate a new production method for solar cell substrates. Gaseous SiCl4 was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl4 exceeded 80% even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm−2 for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol% SiCl4. Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K2SiF6. The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits.

    UR - http://www.scopus.com/inward/record.url?scp=85033799686&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85033799686&partnerID=8YFLogxK

    U2 - 10.1149/2.0641702jes

    DO - 10.1149/2.0641702jes

    M3 - Article

    AN - SCOPUS:85033799686

    VL - 164

    SP - D67-D71

    JO - Journal of the Electrochemical Society

    JF - Journal of the Electrochemical Society

    SN - 0013-4651

    IS - 2

    ER -