抄録
A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl<inf>4</inf> has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K<inf>2</inf>SiF<inf>6</inf> system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an E<inf>q</inf>E<inf>r</inf> (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10<sup>-5</sup> cm<sup>2</sup> s<sup>-1</sup> at 923 K by chronoamperometry.
| 元の言語 | English |
|---|---|
| ページ（範囲） | D444-D448 |
| ジャーナル | Journal of the Electrochemical Society |
| 巻 | 162 |
| 発行部数 | 9 |
| DOI | |
| 出版物ステータス | Published - 2015 6 26 |
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ASJC Scopus subject areas
- Electrochemistry
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
これを引用
Silicon electrodeposition in water-soluble KF-KCl molten salt : Investigations on the reduction of Si(IV) ions. / Maeda, Kazuma; Yasuda, Kouji; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki.
：: Journal of the Electrochemical Society, 巻 162, 番号 9, 26.06.2015, p. D444-D448.研究成果: Article
}
TY - JOUR
T1 - Silicon electrodeposition in water-soluble KF-KCl molten salt
T2 - Investigations on the reduction of Si(IV) ions
AU - Maeda, Kazuma
AU - Yasuda, Kouji
AU - Nohira, Toshiyuki
AU - Hagiwara, Rika
AU - Homma, Takayuki
PY - 2015/6/26
Y1 - 2015/6/26
N2 - A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.
AB - A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.
UR - http://www.scopus.com/inward/record.url?scp=84937027317&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84937027317&partnerID=8YFLogxK
U2 - 10.1149/2.0441509jes
DO - 10.1149/2.0441509jes
M3 - Article
AN - SCOPUS:84937027317
VL - 162
SP - D444-D448
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 9
ER -