Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions

Kazuma Maeda; Kouji Yasuda; Toshiyuki Nohira; Rika Hagiwara; Takayuki Homma

doi:10.1149/2.0441509jes

Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions

Kazuma Maeda, Kouji Yasuda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

研究成果: Article

23 引用（Scopus）

抜粋

A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl<inf>4</inf> has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K<inf>2</inf>SiF<inf>6</inf> system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an E<inf>q</inf>E<inf>r</inf> (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.

元の言語	English
ページ（範囲）	D444-D448
ジャーナル	Journal of the Electrochemical Society
巻	162
発行部数	9
DOI	https://doi.org/10.1149/2.0441509jes
出版物ステータス	Published - 2015 6 26

フィンガープリント

ASJC Scopus subject areas

Electrochemistry
Electronic, Optical and Magnetic Materials
Materials Chemistry
Surfaces, Coatings and Films
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics

これを引用

Maeda, K., Yasuda, K., Nohira, T., Hagiwara, R., & Homma, T. (2015). Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions. Journal of the Electrochemical Society, 162(9), D444-D448. https://doi.org/10.1149/2.0441509jes

@article{1c5287689cf94fd8b48c0b3e80ba4ff7,

title = "Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions",

abstract = "A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.",

author = "Kazuma Maeda and Kouji Yasuda and Toshiyuki Nohira and Rika Hagiwara and Takayuki Homma",

year = "2015",

month = jun,

day = "26",

doi = "10.1149/2.0441509jes",

language = "English",

volume = "162",

pages = "D444--D448",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Silicon electrodeposition in water-soluble KF-KCl molten salt

T2 - Investigations on the reduction of Si(IV) ions

AU - Maeda, Kazuma

AU - Yasuda, Kouji

AU - Nohira, Toshiyuki

AU - Hagiwara, Rika

AU - Homma, Takayuki

PY - 2015/6/26

Y1 - 2015/6/26

N2 - A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.

AB - A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.

UR - http://www.scopus.com/inward/record.url?scp=84937027317&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937027317&partnerID=8YFLogxK

U2 - 10.1149/2.0441509jes

DO - 10.1149/2.0441509jes

M3 - Article

AN - SCOPUS:84937027317

VL - 162

SP - D444-D448

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 9

ER -

文献にアクセス

10.1149/2.0441509jes