Silicon electrodeposition in water-soluble KF-KCl molten salt: Optimization of electrolysis conditions at 923 K

Kouji Yasuda, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

研究成果: Article査読

19 被引用数 (Scopus)

抄録

To establish a new Si-electrodeposition process, the optimum conditions for obtaining adherent, compact, and smooth Si films using molten KF-KCl-K2SiF6 were investigated at 923 K. Galvanostatic electrolysis was conducted on a Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10-500 mA cm-2) and K2SiF6 concentrations (0.5-5.0 mol%). Cross-sectional scanning electron microscopy (SEM) of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentrations and current densities. The relationship between the deposition conditions and Si morphology is discussed in terms of the electrodeposition mechanism.

本文言語English
ページ(範囲)D95-D99
ジャーナルJournal of the Electrochemical Society
163
3
DOI
出版ステータスPublished - 2016

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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