Silicon electrodeposition in water-soluble KF-KCl molten salt: Optimization of electrolysis conditions at 923 K

Kouji Yasuda, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

    研究成果: Article

    14 引用 (Scopus)

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    To establish a new Si-electrodeposition process, the optimum conditions for obtaining adherent, compact, and smooth Si films using molten KF-KCl-K2SiF6 were investigated at 923 K. Galvanostatic electrolysis was conducted on a Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10-500 mA cm-2) and K2SiF6 concentrations (0.5-5.0 mol%). Cross-sectional scanning electron microscopy (SEM) of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentrations and current densities. The relationship between the deposition conditions and Si morphology is discussed in terms of the electrodeposition mechanism.

    元の言語English
    ページ(範囲)D95-D99
    ジャーナルJournal of the Electrochemical Society
    163
    発行部数3
    DOI
    出版物ステータスPublished - 2016

    ASJC Scopus subject areas

    • Electrochemistry
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Renewable Energy, Sustainability and the Environment
    • Condensed Matter Physics

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