Silicon micro/nanofabrication using metastable helium atom beam lithography

Z. P. Wang, M. Kurahashi, Tohru Suzuki, Z. J. Ding, Y. Yamauchi

研究成果: Article

1 引用 (Scopus)

抄録

We utilize metastable helium (He*) atom beam lithography to pattern silicon substrates by using self-assembled monolayer (SAM) of octadecyltrichlorosilane (OTS) grown directly on silicon surface as resist. An improved wet-chemical etching method was used to transfer the resist pattern into silicon substrate. Negative and positive pattern formations with well-defined edges were observed for silicon(1 00) substrate with SAM after exposure to the He* atom beam followed by the etching. Results indicate a clear transition from positive to negative patterns relies on the He* dosage. The pattern sizes on silicon were successfully decreased to the order of 100 nm, even less than 50 nm.

元の言語English
ページ(範囲)7443-7446
ページ数4
ジャーナルJournal of Nanoscience and Nanotechnology
10
発行部数11
DOI
出版物ステータスPublished - 2010 11 1
外部発表Yes

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Helium
metastable atoms
nanofabrication
Silicon
helium atoms
Nanotechnology
Lithography
lithography
Atoms
silicon
Self assembled monolayers
Substrates
etching
Wet etching
Etching
helium
dosage

ASJC Scopus subject areas

  • Medicine(all)

これを引用

Silicon micro/nanofabrication using metastable helium atom beam lithography. / Wang, Z. P.; Kurahashi, M.; Suzuki, Tohru; Ding, Z. J.; Yamauchi, Y.

:: Journal of Nanoscience and Nanotechnology, 巻 10, 番号 11, 01.11.2010, p. 7443-7446.

研究成果: Article

Wang, Z. P. ; Kurahashi, M. ; Suzuki, Tohru ; Ding, Z. J. ; Yamauchi, Y. / Silicon micro/nanofabrication using metastable helium atom beam lithography. :: Journal of Nanoscience and Nanotechnology. 2010 ; 巻 10, 番号 11. pp. 7443-7446.
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