Silicon micro/nanofabrication using metastable helium atom beam lithography

Z. P. Wang, M. Kurahashi, T. Suzuki, Z. J. Ding, Y. Yamauchi*

*この研究の対応する著者

研究成果査読

1 被引用数 (Scopus)

抄録

We utilize metastable helium (He*) atom beam lithography to pattern silicon substrates by using self-assembled monolayer (SAM) of octadecyltrichlorosilane (OTS) grown directly on silicon surface as resist. An improved wet-chemical etching method was used to transfer the resist pattern into silicon substrate. Negative and positive pattern formations with well-defined edges were observed for silicon(1 00) substrate with SAM after exposure to the He* atom beam followed by the etching. Results indicate a clear transition from positive to negative patterns relies on the He* dosage. The pattern sizes on silicon were successfully decreased to the order of 100 nm, even less than 50 nm.

本文言語English
ページ(範囲)7443-7446
ページ数4
ジャーナルJournal of Nanoscience and Nanotechnology
10
11
DOI
出版ステータスPublished - 2010 11
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 生体医工学
  • 材料科学(全般)
  • 凝縮系物理学

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