Silicon on thin buried oxide (SOTB) technology for ultralow-power applications

N. Sugii, T. Iwamatsu, Y. Yamamoto, H. Makiyama, H. Shinohara, H. Aono, H. Oda, S. Kamohara, Y. Yamaguchi, T. Mizutani, Toshiro Hiramoto

研究成果: Conference contribution

抄録

Demands for low-power CMOS devices are still increasing. Ultralow-voltage operation of CMOS with maximum power efficiency can extend the opportunity of using the electron devices to power-conscious applications such as ubiquitous sensor network, etc. The main issues for low-power (highly efficient) operation of the modern scaled CMOS are reducing variability and enabling adaptive control of circuit performance and power consumption under the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. We show features of the SOTB, transistor technology dedicated for ultralow-voltage (down to 0.4 V) operation, circuit design applicable for SOTB and we discuss on the performance projection and ULV application with SOTB.

本文言語English
ホスト出版物のタイトル2013 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 4
ページ189-196
ページ数8
1
DOI
出版ステータスPublished - 2013
外部発表はい
イベント4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013 - Villard-de-Lans, France
継続期間: 2013 7 72013 7 12

出版物シリーズ

名前ECS Transactions
番号1
54
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013
国/地域France
CityVillard-de-Lans
Period13/7/713/7/12

ASJC Scopus subject areas

  • 工学(全般)

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