Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O3 generation, and the advantages of the ozone-grown Si/SiO2 interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process.
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