Silicon oxidation by ozone

Christian K. Fink, Ken Nakamura, Shingo Ichimura, Stephen J. Jenkins

研究成果: Article査読

39 被引用数 (Scopus)

抄録

Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O3 generation, and the advantages of the ozone-grown Si/SiO2 interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process.

本文言語English
論文番号183001
ジャーナルJournal of Physics Condensed Matter
21
18
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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