Silicon oxynitride waveguides for optoelectronic integrated circuits

O. P. Agnihotri, Rajeev Tyagi, Isamu Kato

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Planar optical waveguides on p-type Si wafers have been fabricated by a photo-induced deposition process. Silicon oxynitride was deposited using a gaseous mixture of SiH4 (2% in Ar), NH3 and N2O under 253.7 nm UV radiation. The oxynitride composition was varied by changing N2O: (N2O + NH3) ratio while keeping N2O + NH3 and SiH4 flow rates constant. The refractive index varied from 1.46 to 1.95. The optical energy gap increased from 4.8 to 5.7 as the flow rate ratio varied from 0 to 0.25. Si-N bond shifts to higher energy owing to the incorporation of oxygen. A planar waveguide structure was fabricated using thermally grown SiO2 buffer layer of 1.1 μm thickness. The loss was estimated to be 1.1 dB/cm for TE0 mode at 632.8nm. The accuracy of measurements is 0.02 dB/cm.

本文言語English
ページ(範囲)6711-6713
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
11
出版ステータスPublished - 1997 11月

ASJC Scopus subject areas

  • 物理学および天文学(その他)
  • 工学(全般)

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