Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride

Hiromitsu Kato*, Hidefumi Sato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Electrical conduction at high fields was examined in a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical vapour deposition. It was shown that the conduction is attributable to the Poole-Frenkel (PF) emission in the two materials. The energy depths of the PF sites and the dependences on the sample's chemical composition are quite similar for the two samples. It is considered that the PF sites in the two materials are identical.

本文言語English
ページ(範囲)2197-2205
ページ数9
ジャーナルJournal of Physics Condensed Matter
15
13
DOI
出版ステータスPublished - 2003 4 9

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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