Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

K. Shih, M. Nimura, Y. Kanehira, T. Ogashiwa, J. Mizuno, S. Shoji

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

本文言語English
ホスト出版物のタイトルIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
ページ299-302
ページ数4
DOI
出版ステータスPublished - 2013 4 2
イベントIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China
継続期間: 2013 1 202013 1 24

出版物シリーズ

名前Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN(印刷版)1084-6999

Conference

ConferenceIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
国/地域Taiwan, Province of China
CityTaipei
Period13/1/2013/1/24

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 機械工学
  • 電子工学および電気工学

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