SIMS depth profile study using metal cluster complex ion bombardment

M. Tomita; T. Kinno; M. Koike; H. Tanaka; S. Takeno; Y. Fujiwara; K. Kondou; Y. Teranishi; H. Nonaka; T. Fujimoto; A. Kurokawa; S. Ichimura

doi:10.1016/j.nimb.2006.12.109

SIMS depth profile study using metal cluster complex ion bombardment

M. Tomita^*, T. Kinno, M. Koike, H. Tanaka, S. Takeno, Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, S. Ichimura

^*この研究の対応する著者

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

SIMS depth profiles using a metal cluster complex ion of Ir₄ (CO)₇⁺ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O₂ by the formation of a carbon cover-layer derived from Ir₄ (CO)₇⁺ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

本文言語	English
ページ（範囲）	242-245
ページ数	4
ジャーナル	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
巻	258
号	1
DOI	https://doi.org/10.1016/j.nimb.2006.12.109
出版ステータス	Published - 2007 5月 1
外部発表	はい

ASJC Scopus subject areas

核物理学および高エネルギー物理学
器械工学

文献へのアクセス

10.1016/j.nimb.2006.12.109

他のファイルとリンク

引用スタイル

Tomita, M., Kinno, T., Koike, M., Tanaka, H., Takeno, S., Fujiwara, Y., Kondou, K., Teranishi, Y., Nonaka, H., Fujimoto, T., Kurokawa, A., & Ichimura, S. (2007). SIMS depth profile study using metal cluster complex ion bombardment. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 258(1), 242-245. https://doi.org/10.1016/j.nimb.2006.12.109

SIMS depth profile study using metal cluster complex ion bombardment. / Tomita, M.; Kinno, T.; Koike, M.; Tanaka, H.; Takeno, S.; Fujiwara, Y.; Kondou, K.; Teranishi, Y.; Nonaka, H.; Fujimoto, T.; Kurokawa, A.; Ichimura, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 258, No. 1, 01.05.2007, p. 242-245.

研究成果: Article › 査読

Tomita, M, Kinno, T, Koike, M, Tanaka, H, Takeno, S, Fujiwara, Y, Kondou, K, Teranishi, Y, Nonaka, H, Fujimoto, T, Kurokawa, A & Ichimura, S 2007, 'SIMS depth profile study using metal cluster complex ion bombardment', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 258, no. 1, pp. 242-245. https://doi.org/10.1016/j.nimb.2006.12.109

Tomita, M. ; Kinno, T. ; Koike, M. ; Tanaka, H. ; Takeno, S. ; Fujiwara, Y. ; Kondou, K. ; Teranishi, Y. ; Nonaka, H. ; Fujimoto, T. ; Kurokawa, A. ; Ichimura, S. / SIMS depth profile study using metal cluster complex ion bombardment. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2007 ; Vol. 258, No. 1. pp. 242-245.

@article{e8355310d9304a18a8fc40cfb7a2e206,

title = "SIMS depth profile study using metal cluster complex ion bombardment",

abstract = "SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.",

keywords = "Cluster ion, Depth profile, Depth resolution, Ir (CO), SIMS, Sputtering yield",

author = "M. Tomita and T. Kinno and M. Koike and H. Tanaka and S. Takeno and Y. Fujiwara and K. Kondou and Y. Teranishi and H. Nonaka and T. Fujimoto and A. Kurokawa and S. Ichimura",

year = "2007",

month = may,

day = "1",

doi = "10.1016/j.nimb.2006.12.109",

language = "English",

volume = "258",

pages = "242--245",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - SIMS depth profile study using metal cluster complex ion bombardment

AU - Tomita, M.

AU - Kinno, T.

AU - Koike, M.

AU - Tanaka, H.

AU - Takeno, S.

AU - Fujiwara, Y.

AU - Kondou, K.

AU - Teranishi, Y.

AU - Nonaka, H.

AU - Fujimoto, T.

AU - Kurokawa, A.

AU - Ichimura, S.

PY - 2007/5/1

Y1 - 2007/5/1

N2 - SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

AB - SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

KW - Cluster ion

KW - Depth profile

KW - Depth resolution

KW - Ir (CO)

KW - SIMS

KW - Sputtering yield

UR - http://www.scopus.com/inward/record.url?scp=34147099030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34147099030&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2006.12.109

DO - 10.1016/j.nimb.2006.12.109

M3 - Article

AN - SCOPUS:34147099030

VL - 258

SP - 242

EP - 245

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1

ER -

SIMS depth profile study using metal cluster complex ion bombardment

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル