SIMS depth profile study using metal cluster complex ion bombardment

M. Tomita*, T. Kinno, M. Koike, H. Tanaka, S. Takeno, Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, S. Ichimura

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

本文言語English
ページ(範囲)242-245
ページ数4
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
258
1
DOI
出版ステータスPublished - 2007 5月 1
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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