The simulation of electron/solid interactions is discussed, with emphasis on its applicability to the matrix correction in quantitative analysis by AES, and to its potential use in background substraction in AES. The Monte Carlo calculation models are first explained, which have been improved to allow the estimation of (i) back‐scattering correction factors, and (ii) energy profiles of back‐scattered electrons in the high‐energy region (i.e. elastically‐scattered electrons and the characteristic loss structures) and the slow secondary region. For this purpose, a dielectric approach is used for the treatment of the electron inelastic scattering in the solid. Then, the models are applied to samples with bi‐layer structures, and the change of Si Auger signals observed during sputter‐etching of a sample consisting of a Si thin film (7000 Å) on a W substrate is well explained. Changes in the energy distributions of back‐scattered electrons during the formation of very thin (5 to 100 Å) Cu films on a Si substrate are also estimated by the Monte Carlo calculation, together with the shapes of the elastic peak and the characteristic loss peaks.
ASJC Scopus subject areas
- 化学 (全般)