Simulation of electron/solid interaction and its application to quantitative analysis by Auger electron spectroscopy

S. Ichimura, Ding Ze‐Jun, R. Shimizu

研究成果: Article査読

33 被引用数 (Scopus)

抄録

The simulation of electron/solid interactions is discussed, with emphasis on its applicability to the matrix correction in quantitative analysis by AES, and to its potential use in background substraction in AES. The Monte Carlo calculation models are first explained, which have been improved to allow the estimation of (i) back‐scattering correction factors, and (ii) energy profiles of back‐scattered electrons in the high‐energy region (i.e. elastically‐scattered electrons and the characteristic loss structures) and the slow secondary region. For this purpose, a dielectric approach is used for the treatment of the electron inelastic scattering in the solid. Then, the models are applied to samples with bi‐layer structures, and the change of Si Auger signals observed during sputter‐etching of a sample consisting of a Si thin film (7000 Å) on a W substrate is well explained. Changes in the energy distributions of back‐scattered electrons during the formation of very thin (5 to 100 Å) Cu films on a Si substrate are also estimated by the Monte Carlo calculation, together with the shapes of the elastic peak and the characteristic loss peaks.

本文言語English
ページ(範囲)149-159
ページ数11
ジャーナルSurface and Interface Analysis
13
2-3
DOI
出版ステータスPublished - 1988 11
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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