Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

Hoang Phuong Phan*, Han Hao Cheng, Toan Dinh, Barry Wood, Tuan Khoa Nguyen, Fengwen Mu, Harshad Kamble, Raja Vadivelu, Glenn Walker, Leonie Hold, Alan Iacopi, Ben Haylock, Dzung Viet Dao, Mirko Lobino, Tadatomo Suga, Nam Trung Nguyen


研究成果: Article査読

39 被引用数 (Scopus)


Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.

ジャーナルACS Applied Materials and Interfaces
出版ステータスPublished - 2017 8月 23

ASJC Scopus subject areas

  • 材料科学(全般)


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