SiOxNy back-end integration technologies for heterogeneously integrated Si platform

H. Nishi, T. Tsuchizawa, T. Kakitsuka, K. Hasebe, K. Takeda, T. Hiraki, T. Fujii, T. Yamamoto, S. Matsuo

研究成果: Conference contribution

抄録

Photonic integrated circuits on Si have been attracting much attention and are being intensively investigated. On a Si photonic chip, in addition to the monolithic Si and Ge photonic devices, InP-based active devices can be integrated heterogeneously by utilizing direct-bonding technology. To connect these functional devices, we have proposed back-end photonic wiring using silicon oxynitride (SiOxNy) -based waveguides. In this paper, we report recent progress in our back-end photonics integration technology. First, back-end SiOx waveguide integration with InP-based membrane active devices will be presented. Then, our technology for the low-loss SiOxNy deposition at low temperature will be presented, which is applied to a SiN waveguide for compact arrayed-waveguide-grating (AWG) filter and Ge integration. These technologies have attributes for future highly integrated photonic circuits on Si.

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Materials
ホスト出版物のサブタイトルMaterials, Processing, and Devices 7
編集者J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
出版社Electrochemical Society Inc.
ページ211-221
ページ数11
8
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2016
外部発表はい
イベントSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10月 22016 10月 7

出版物シリーズ

名前ECS Transactions
番号8
75
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
国/地域United States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • 工学(全般)

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