Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala

研究成果: Article査読

75 被引用数 (Scopus)

抄録

We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.

本文言語English
論文番号7851006
ページ(範囲)856-873
ページ数18
ジャーナルIEEE Transactions on Electron Devices
64
3
DOI
出版ステータスPublished - 2017 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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