We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.
|出版ステータス||Published - 2009|
|イベント||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
継続期間: 2009 10月 5 → 2009 10月 7
|Other||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|Period||09/10/5 → 09/10/7|
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