Solution-based fabrication of high-k dielectrics using oxide nanosheets

Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Hiroshi Funakubo, Kazunori Takada, Takayoshi Sasaki

研究成果: Conference contribution

抜粋

We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

元の言語English
ホスト出版物のタイトルECS Transactions
ページ349-352
ページ数4
25
エディション6
DOI
出版物ステータスPublished - 2009
外部発表Yes
イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
継続期間: 2009 10 52009 10 7

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Austria
Vienna
期間09/10/509/10/7

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Osada, M., Akatsuka, K., Ebina, Y., Funakubo, H., Takada, K., & Sasaki, T. (2009). Solution-based fabrication of high-k dielectrics using oxide nanosheets. : ECS Transactions (6 版, 巻 25, pp. 349-352) https://doi.org/10.1149/1.3206633