Solution growth and crystallinity characterization of bulk 6H-SiC

N. Yashiro*, K. Kusunoki, K. Kamei, A. Yauchi

*この研究の対応する著者

研究成果: Conference contribution

15 被引用数 (Scopus)

抄録

The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm -2, which was comparable to that of the crystal seed.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
出版社Trans Tech Publications Ltd
ページ33-36
ページ数4
645-648
ISBN(印刷版)0878492798, 9780878492794
DOI
出版ステータスPublished - 2010
外部発表はい
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
継続期間: 2009 10月 112009 10月 16

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷版)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
国/地域Germany
CityNurnberg
Period09/10/1109/10/16

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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