Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere

K. Kusunoki, K. Kamei, N. Yashiro, T. Tanaka, A. Yauchi

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1845-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)si by TEM, molten KOH etching and precise XRD measurement.

本文言語English
ページ(範囲)187-190
ページ数4
ジャーナルMaterials Science Forum
600-603
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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