Solution growth of 3C-SiC single crystals by cold crucible technique

T. Tanaka, N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi

研究成果: Article査読

1 被引用数 (Scopus)


We have successfully grown 3C-SiC(111) single crystals 10mm × 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 10 5-106/cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

ジャーナルMaterials Science Forum
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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