Solution growth of off-axis 4H-SiC for power device application

Ryo Hattori, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

本文言語English
ページ(範囲)179-182
ページ数4
ジャーナルMaterials Science Forum
600-603
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 機械工学
  • 材料力学
  • 材料科学(全般)
  • 凝縮系物理学

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