Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique

K. Kusunoki*, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, K. Nakajima

*この研究の対応する著者

研究成果: Conference contribution

42 被引用数 (Scopus)

抄録

We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the enhancement of the carbon transport from the graphite crucible to the growth interface using the ACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was significantly suppressed by using the ACRT. It was thought that the intensive convection near the growth interface resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth can be accomplished in the SiC solution growth using the ACRT.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
ページ119-122
ページ数4
527-529
PART 1
出版ステータスPublished - 2006
外部発表はい
イベントInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
継続期間: 2005 9 182005 9 23

出版物シリーズ

名前Materials Science Forum
番号PART 1
527-529
ISSN(印刷版)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
国/地域United States
CityPittsburgh, PA
Period05/9/1805/9/23

ASJC Scopus subject areas

  • 材料科学(全般)

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