Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt

Kazuhito Kamei*, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Nobuhiro Okada, Tsutomu Tanaka, Akihiro Yauchi

*この研究の対応する著者

研究成果査読

62 被引用数 (Scopus)

抄録

We performed the top seeded solution growth of 6H; 4H-SiC single crystals from Si-Ti-C ternary solution. The 5 mm thick 2 in diameter 6H-SiC was grown by optimizing the growth condition such as temperature distribution in the crucible. The obtained 6H-SiC self-standing crystal exhibited homogeneous green color without cracks and inclusions. We also investigated the LPE growth of 4H-SiC on 8° off-axed pvt-SiC substrate aiming at the application to the electronic devices. The LPE layer drastically reduced the density of basal-plane dislocation, which significantly degrades the device performance, although the total dislocation density remained unchanged. The ω-scan rocking curves using 000n reflection for both 6H-SiC wafer and 4H-SiC LPE layer showed the rather small FWHM of less than 20 arcsec indicating the excellent crystallinity of the solution grown SiC.

本文言語English
ページ(範囲)855-858
ページ数4
ジャーナルJournal of Crystal Growth
311
3
DOI
出版ステータスPublished - 2009 1 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料化学
  • 無機化学

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