Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt

We performed the top seeded solution growth of 6H; 4H-SiC single crystals from Si-Ti-C ternary solution. The 5 mm thick 2 in diameter 6H-SiC was grown by optimizing the growth condition such as temperature distribution in the crucible. The obtained 6H-SiC self-standing crystal exhibited homogeneous green color without cracks and inclusions. We also investigated the LPE growth of 4H-SiC on 8° off-axed pvt-SiC substrate aiming at the application to the electronic devices. The LPE layer drastically reduced the density of basal-plane dislocation, which significantly degrades the device performance, although the total dislocation density remained unchanged. The ω-scan rocking curves using 000n reflection for both 6H-SiC wafer and 4H-SiC LPE layer showed the rather small FWHM of less than 20 arcsec indicating the excellent crystallinity of the solution grown SiC.