TY - JOUR
T1 - Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt
AU - Kamei, Kazuhito
AU - Kusunoki, Kazuhiko
AU - Yashiro, Nobuyoshi
AU - Okada, Nobuhiro
AU - Tanaka, Tsutomu
AU - Yauchi, Akihiro
PY - 2009/1/15
Y1 - 2009/1/15
N2 - We performed the top seeded solution growth of 6H; 4H-SiC single crystals from Si-Ti-C ternary solution. The 5 mm thick 2 in diameter 6H-SiC was grown by optimizing the growth condition such as temperature distribution in the crucible. The obtained 6H-SiC self-standing crystal exhibited homogeneous green color without cracks and inclusions. We also investigated the LPE growth of 4H-SiC on 8° off-axed pvt-SiC substrate aiming at the application to the electronic devices. The LPE layer drastically reduced the density of basal-plane dislocation, which significantly degrades the device performance, although the total dislocation density remained unchanged. The ω-scan rocking curves using 000n reflection for both 6H-SiC wafer and 4H-SiC LPE layer showed the rather small FWHM of less than 20 arcsec indicating the excellent crystallinity of the solution grown SiC.
AB - We performed the top seeded solution growth of 6H; 4H-SiC single crystals from Si-Ti-C ternary solution. The 5 mm thick 2 in diameter 6H-SiC was grown by optimizing the growth condition such as temperature distribution in the crucible. The obtained 6H-SiC self-standing crystal exhibited homogeneous green color without cracks and inclusions. We also investigated the LPE growth of 4H-SiC on 8° off-axed pvt-SiC substrate aiming at the application to the electronic devices. The LPE layer drastically reduced the density of basal-plane dislocation, which significantly degrades the device performance, although the total dislocation density remained unchanged. The ω-scan rocking curves using 000n reflection for both 6H-SiC wafer and 4H-SiC LPE layer showed the rather small FWHM of less than 20 arcsec indicating the excellent crystallinity of the solution grown SiC.
KW - A1. Crystal morphology
KW - A2. Top seeded solution growth
KW - A3. Liquid phase epitaxy
KW - B1. Inorganic compounds
KW - B2. Semiconducting silicon compounds
KW - B3. Bipolar transistor
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U2 - 10.1016/j.jcrysgro.2008.09.142
DO - 10.1016/j.jcrysgro.2008.09.142
M3 - Article
AN - SCOPUS:59749091976
VL - 311
SP - 855
EP - 858
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -