Solution growth of single crystalline 6H-SiC from Si-Ti-C ternary solution

Kenji Suzuki*, Kazuhiko Kusunoki, Nobuyuki Yashiro, Nobuhiro Okada, Kazuhito Kamei, Akihiro Yauchi

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 um/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology, It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.

本文言語English
ページ(範囲)89-94
ページ数6
ジャーナルKey Engineering Materials
352
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学工学(その他)

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