Solution growth of single crystalline 6H-SiC from Si-Ti-C ternary solution

Kenji Suzuki, Kazuhiko Kusunoki, Nobuyuki Yashiro, Nobuhiro Okada, Kazuhito Kamei, Akihiro Yauchi

研究成果: Article

9 引用 (Scopus)

抄録

Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 um/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology, It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.

元の言語English
ページ(範囲)89-94
ページ数6
ジャーナルKey Engineering Materials
352
DOI
出版物ステータスPublished - 2007
外部発表Yes

Fingerprint

Crucibles
Crystalline materials
Crystals
Single crystals
X ray diffraction
Graphite
Full width at half maximum
Surface morphology
Carbon
Color
Cracks

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemical Engineering (miscellaneous)

これを引用

Suzuki, K., Kusunoki, K., Yashiro, N., Okada, N., Kamei, K., & Yauchi, A. (2007). Solution growth of single crystalline 6H-SiC from Si-Ti-C ternary solution. Key Engineering Materials, 352, 89-94. https://doi.org/10.4028/0-87849-454-5.89

Solution growth of single crystalline 6H-SiC from Si-Ti-C ternary solution. / Suzuki, Kenji; Kusunoki, Kazuhiko; Yashiro, Nobuyuki; Okada, Nobuhiro; Kamei, Kazuhito; Yauchi, Akihiro.

:: Key Engineering Materials, 巻 352, 2007, p. 89-94.

研究成果: Article

Suzuki, K, Kusunoki, K, Yashiro, N, Okada, N, Kamei, K & Yauchi, A 2007, 'Solution growth of single crystalline 6H-SiC from Si-Ti-C ternary solution', Key Engineering Materials, 巻. 352, pp. 89-94. https://doi.org/10.4028/0-87849-454-5.89
Suzuki, Kenji ; Kusunoki, Kazuhiko ; Yashiro, Nobuyuki ; Okada, Nobuhiro ; Kamei, Kazuhito ; Yauchi, Akihiro. / Solution growth of single crystalline 6H-SiC from Si-Ti-C ternary solution. :: Key Engineering Materials. 2007 ; 巻 352. pp. 89-94.
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abstract = "Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 um/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology, It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.",
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AU - Suzuki, Kenji

AU - Kusunoki, Kazuhiko

AU - Yashiro, Nobuyuki

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AU - Kamei, Kazuhito

AU - Yauchi, Akihiro

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AB - Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 um/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology, It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.

KW - 6H-SiC

KW - Accelerated crucible rotation technique (ACRT)

KW - Fluid flow analysis

KW - Si-Ti-C ternary solution

KW - Single crystal

KW - Solution growth

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