Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

We numerically demonstrate that a random dopant fluctuation (RDF) in a source region causes a noticeable variability in the on-current of Si nanowire (NW) transistors, and its effect is much larger than that of a random telegraph noise (RTN). This work assesses the static and dynamic variability of NW device characteristics using the ensemble Monte Carlo/molecular dynamics (EMC/MD) simulation, which employs parallel computing technique using a graphic processing unit (GPU). The current flow in a one-dimensional NW device is determined by the number of dopants at the source edge, indicating the importance of forming an abrupt source-channel boundary to suppress the variability.

本文言語English
ホスト出版物のタイトル2014 IEEE International Electron Devices Meeting, IEDM 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ページ30.1.1-30.1.4
February
ISBN(電子版)9781479980017
DOI
出版ステータスPublished - 2015 2 20
イベント2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
継続期間: 2014 12 152014 12 17

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
番号February
2015-February
ISSN(印刷版)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
国/地域United States
CitySan Francisco
Period14/12/1514/12/17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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