Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

Kazuhiro Marumoto*, Shin Ichi Kuroda, Taishi Takenobu, Yoshihiro Iwasa

*この研究の対応する著者

研究成果: Article査読

147 被引用数 (Scopus)

抄録

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

本文言語English
論文番号256603
ジャーナルPhysical Review Letters
97
25
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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