Specific spectral features in electron emission from nanocrystalline silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer

Daisuke Sakai*, Chunhei Oshima, Toshiyuki Ohta, Nobuyoshi Koshida

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A display-type analyzer with ±20° acceptance angle and high-energy resolution has been applied to analysis of the operation mechanism in a nanocrystalline polysilicon quasiballistic emitter. Angle-resolved emission patterns and the corresponding energy distributions are measured as a function of the applied device voltage in the range from 10 to 20 V. The experimental data suggest that there are two kinds of emission band in the energy spectra. The one emission peak at lower energies exhibits definitely directional features, whereas a significantly large angular dispersion is observed in another emission peak at higher energies. The intensity of the latter emission band becomes dominant in the range of the applied device voltage higher than 15 V. These results can be explained from the correlation between the silicon nanostructure in the device and the major carrier transport mode there. The analysis presented here supports the previously proposed model that the quasiballistic emission is based on the field-induced generation of energetic electrons in nanocrystalline silicon diode.

本文言語English
ページ(範囲)1782-1786
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
26
5
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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