Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

Yoshitaka Taniyasu*, Ryouichi Ito, Norio Shimoyama, Megumi Kurihara, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H2/monomethylhydrazine (MMHy) ambient. Spectroscopic ellipsometry revealed that the buffer layer thickness was increased and the surface was roughened during the annealing process. The change of surface morphology was also confirmed by the atomic force microscopy measurement. These observations would be associated with the nitridation of the GaAs substrate by the ambient MMHy and re-crystallization of the GaN buffer layer. Spectroscopic ellipsometry is a helpful technique to study the initial growth stages of GaN films on GaAs substrates.

本文言語English
ページ(範囲)305-309
ページ数5
ジャーナルJournal of Crystal Growth
189-190
DOI
出版ステータスPublished - 1998 6 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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