Speed enhancement at Vdd = 0.4V and random Τpd variability reduction and analyisis of Τpd variability of silicon on thin buried oxide circuits

Hideki Makiyama*, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii, Koichiro Ishibashi, Yasuo Yamaguchi

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Ring oscillator characteristics of silicon on thin buried oxide (SOTB) were investigated at Vdd down to 0.4V. It was demonstrated that both the propagation delay (τpd) and energy-delay (ED) product of SOTB were smaller than those of bulk devices due to its steeper subthreshold swing. It was found that the τpd variability of SOTB is dominated by global variability because local variability is small due to the intrinsic channel. The origin of τpd variability was analyzed by taking the transistor dc characteristics into account. It was found that the τpd variability of SOTB is caused by the global drive current variability because the effect of resistance (or effective drain current I eff ) is much larger than that of capacitance with Vdd reduction. The τpd variability is mainly caused by the global drive-current variability and thus can be easily reduced by die-to-die substrate bias voltage control.

本文言語English
論文番号04EC07
ジャーナルJapanese journal of applied physics
53
4 SPEC. ISSUE
DOI
出版ステータスPublished - 2014 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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