抄録
We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.
本文言語 | English |
---|---|
ページ(範囲) | 3492-3494 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 85 |
号 | 16 |
DOI | |
出版ステータス | Published - 2004 10月 18 |
ASJC Scopus subject areas
- 物理学および天文学(その他)