Spin injection from Fe3Si into GaAs

A. Kawaharazuka, M. Ramsteiner, J. Herfort, H. P. Schönherr, H. Kostial, K. H. Ploog

研究成果: Article

90 引用 (Scopus)

抄録

We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

元の言語English
ページ(範囲)3492-3494
ページ数3
ジャーナルApplied Physics Letters
85
発行部数16
DOI
出版物ステータスPublished - 2004 10 18

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injection
polarization
semiconductor devices
light emitting diodes
temperature dependence
room temperature
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Kawaharazuka, A., Ramsteiner, M., Herfort, J., Schönherr, H. P., Kostial, H., & Ploog, K. H. (2004). Spin injection from Fe3Si into GaAs. Applied Physics Letters, 85(16), 3492-3494. https://doi.org/10.1063/1.1807014

Spin injection from Fe3Si into GaAs. / Kawaharazuka, A.; Ramsteiner, M.; Herfort, J.; Schönherr, H. P.; Kostial, H.; Ploog, K. H.

:: Applied Physics Letters, 巻 85, 番号 16, 18.10.2004, p. 3492-3494.

研究成果: Article

Kawaharazuka, A, Ramsteiner, M, Herfort, J, Schönherr, HP, Kostial, H & Ploog, KH 2004, 'Spin injection from Fe3Si into GaAs', Applied Physics Letters, 巻. 85, 番号 16, pp. 3492-3494. https://doi.org/10.1063/1.1807014
Kawaharazuka A, Ramsteiner M, Herfort J, Schönherr HP, Kostial H, Ploog KH. Spin injection from Fe3Si into GaAs. Applied Physics Letters. 2004 10 18;85(16):3492-3494. https://doi.org/10.1063/1.1807014
Kawaharazuka, A. ; Ramsteiner, M. ; Herfort, J. ; Schönherr, H. P. ; Kostial, H. ; Ploog, K. H. / Spin injection from Fe3Si into GaAs. :: Applied Physics Letters. 2004 ; 巻 85, 番号 16. pp. 3492-3494.
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