Spin injection from Fe3Si into GaAs

A. Kawaharazuka; M. Ramsteiner; J. Herfort; H. P. Schönherr; H. Kostial; K. H. Ploog

doi:10.1063/1.1807014

Spin injection from Fe₃Si into GaAs

A. Kawaharazuka^*, M. Ramsteiner, J. Herfort, H. P. Schönherr, H. Kostial, K. H. Ploog

^*この研究の対応する著者

理工学術院総合研究所

研究成果: Article › 査読

95 被引用数 (Scopus)

抄録

We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe₃Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

本文言語	English
ページ（範囲）	3492-3494
ページ数	3
ジャーナル	Applied Physics Letters
巻	85
号	16
DOI	https://doi.org/10.1063/1.1807014
出版ステータス	Published - 2004 10月 18

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1807014

他のファイルとリンク

引用スタイル

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AU - Kawaharazuka, A.

AU - Ramsteiner, M.

AU - Herfort, J.

AU - Schönherr, H. P.

AU - Kostial, H.

AU - Ploog, K. H.

PY - 2004/10/18

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AB - We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

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