TY - JOUR
T1 - Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction
AU - Kita, T.
AU - Kohda, M.
AU - Ohno, Y.
AU - Matsukura, F.
AU - Ohno, H.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.
AB - We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.
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U2 - 10.1002/pssc.200672865
DO - 10.1002/pssc.200672865
M3 - Conference article
AN - SCOPUS:49649104547
VL - 3
SP - 4164
EP - 4167
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 12
T2 - 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV
Y2 - 15 August 2006 through 18 August 2006
ER -