Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction

T. Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

本文言語English
ページ(範囲)4164-4167
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
3
12
DOI
出版ステータスPublished - 2006 12 1
外部発表はい
イベント4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan
継続期間: 2006 8 152006 8 18

ASJC Scopus subject areas

  • 凝縮系物理学

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