Spin polarization of Co 2FeSi full-heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Z. Gercsi*, A. Rajanikanth, Y. K. Takahashi, K. Hono, M. Kikuchi, N. Tezuka, K. Inomata

*この研究の対応する著者

研究成果: Article査読

76 被引用数 (Scopus)

抄録

The authors report spin polarization (P) and tunneling magnetoresistance (TMR) of epitaxially grown Co 2FeSi thin films on a MgO (001) substrate. A Heusler-type L2 1 structure was observed in the samples sputter deposited at 473 K or above. The P value of the ordered film was measured as 0.49±0.02 by the point contact Andreev reflection (PCAR) technique. The TMR values obtained from the magnetic tunneling junction (MTJ) using the Co 2FeSi electrode and Al-oxide barrier were 67.5% at 5 K and 43.6% at 298 K, respectively. The P value estimated from the TMR using Julliere's model matches the spin polarization measured by the PCAR very well, indicating that the TMR value from the MTJ is governed by the intrinsic value of P of the electrode material for incoherent tunneling.

本文言語English
論文番号082512
ジャーナルApplied Physics Letters
89
8
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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