Spin polarization of Co2 MnGe and Co2 MnSi thin films with A2 and L 21 structures

A. Rajanikanth*, Y. K. Takahashi, K. Hono

*この研究の対応する著者

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Spin polarizations (P) of polycrystalline Co2 MnGe and Co2 MnSi films that were sputter deposited on thermally oxidized Si substrates at various substrate temperatures (Ts) were measured by the point contact Andreev reflection technique. While continuous films were grown at Ts =500 °C with the L 21 structure, Mn-deficit islands were formed at Ts >700 °C. P showed strong dependence on the state of order of the alloys; P=0.58 for L 21 ordered Co2 MnGe, P=0.35 for A2 Co2 MnGe, P=0.54 for L 21 ordered Co2 MnSi, and P=0.52 for A2 Co2 MnSi. The experimentally determined P values of the L 21 ordered films are lower than the theoretical predictions, which is attributed to the imperfect L 21 ordering.

本文言語English
論文番号023901
ジャーナルJournal of Applied Physics
101
2
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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