抜粋
Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.
| 元の言語 | English |
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| ページ | 320-325 |
| ページ数 | 6 |
| 出版物ステータス | Published - 2004 12 1 |
| イベント | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States 継続期間: 2004 10 3 → 2004 10 8 |
Conference
| Conference | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
|---|---|
| 国 | United States |
| 市 | Honolulu, HI |
| 期間 | 04/10/3 → 04/10/8 |
ASJC Scopus subject areas
- Engineering(all)
フィンガープリント Spin-polarization of excitons in GaN' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Spin-polarization of excitons in GaN. 320-325. 論文発表場所 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.