Spin-polarization of excitons in GaN

Takamasa Kuroda; Atsushi Tackeuchi; Kazuyoshi Taniguchi; Takako Chinone; Naochika Horio

Spin-polarization of excitons in GaN

Takamasa Kuroda^*, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Naochika Horio

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

抄録

Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τ_S, is found to be proportional to T ^1.4, where T is the temperature.

本文言語	English
ページ	320-325
ページ数	6
出版ステータス	Published - 2004 12月 1
イベント	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States 継続期間: 2004 10月 3 → 2004 10月 8

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
国/地域	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

ASJC Scopus subject areas

工学（全般）

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引用スタイル

Spin-polarization of excitons in GaN. / Kuroda, Takamasa; Tackeuchi, Atsushi; Taniguchi, Kazuyoshi その他.

2004. 320-325 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

研究成果: Paper › 査読

Kuroda, T, Tackeuchi, A, Taniguchi, K, Chinone, T & Horio, N 2004, 'Spin-polarization of excitons in GaN', Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 04/10/3 - 04/10/8 pp. 320-325.

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abstract = "Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.",

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note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

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AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

AU - Taniguchi, Kazuyoshi

AU - Chinone, Takako

AU - Horio, Naochika

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

AB - Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

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Y2 - 3 October 2004 through 8 October 2004

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Spin-polarization of excitons in GaN

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