Spin-polarization of excitons in GaN

Takamasa Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Naochika Horio

研究成果: Paper

抜粋

Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

元の言語English
ページ320-325
ページ数6
出版物ステータスPublished - 2004 12 1
イベントState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
継続期間: 2004 10 32004 10 8

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
United States
Honolulu, HI
期間04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Spin-polarization of excitons in GaN. 320-325. 論文発表場所 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.