Spin-polarization of excitons in GaN

Takamasa Kuroda*, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Naochika Horio

*この研究の対応する著者

研究成果査読

抄録

Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

本文言語English
ページ320-325
ページ数6
出版ステータスPublished - 2004 12 1
イベントState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
継続期間: 2004 10 32004 10 8

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
国/地域United States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • 工学(全般)

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