抄録
Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.
本文言語 | English |
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ページ | 320-325 |
ページ数 | 6 |
出版ステータス | Published - 2004 12月 1 |
イベント | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States 継続期間: 2004 10月 3 → 2004 10月 8 |
Conference
Conference | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
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国/地域 | United States |
City | Honolulu, HI |
Period | 04/10/3 → 04/10/8 |
ASJC Scopus subject areas
- 工学(全般)