Spin-polarized electron injection through an Fe/InAs junction

Hiroshi Ohno, Kanji Yoh*, Kazuhisa Sueoka, Koichi Mukasa, Atsushi Kawaharazuka, Manfred E. Ramsteiner

*この研究の対応する著者

研究成果査読

21 被引用数 (Scopus)

抄録

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(lOO) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12% at the temperature of 6.5 K and the external magnetic field of 10T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
2 A
出版ステータスPublished - 2003 2 1

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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