TY - JOUR
T1 - Spin-polarized localized exciton photoluminescence dynamics in GaInNAs quantum wells
AU - Lu, Shulong
AU - Nosho, Hidetaka
AU - Tackeuchi, Atsushi
AU - Bian, Lifeng
AU - Dong, Jianrong
AU - Niu, Zhichuan
PY - 2009/12/1
Y1 - 2009/12/1
N2 - We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by timeresolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process.
AB - We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by timeresolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process.
UR - http://www.scopus.com/inward/record.url?scp=77952714024&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952714024&partnerID=8YFLogxK
U2 - 10.1143/JJAP.48.100206
DO - 10.1143/JJAP.48.100206
M3 - Article
AN - SCOPUS:77952714024
VL - 48
SP - 1002061
EP - 1002063
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 Part 1
ER -