Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

S. Chichibu*, T. Azuhata, T. Sota, S. Nakamura

*この研究の対応する著者

研究成果: Article査読

1186 被引用数 (Scopus)

抄録

Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

本文言語English
ページ(範囲)4188-4190
ページ数3
ジャーナルApplied Physics Letters
69
27
DOI
出版ステータスPublished - 1996 12 30

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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