Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

K. Hirama*, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Kawarada, H. Umezawa

*この研究の対応する著者

研究成果査読

84 被引用数 (Scopus)

抄録

Diamond metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated on IIa-type large-grain diamond substrates with a (110) preferential surface. The drain current and cutoff frequency are -790 mAmm and 45 GHz, respectively, which are higher than those of single-crystal diamond FETs fabricated on (001) homoepitaxial diamond films. The hole carrier density of the hole accumulation layer depends on the orientation of the hydrogen-terminated diamond surface, for which (110) preferentially oriented films show 50%-70% lower sheet resistance than a (001) substrate. We propose that the hole density of the surface accumulation layer is proportional to the C-H bond density on the surface.

本文言語English
論文番号112107
ジャーナルApplied Physics Letters
92
11
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル