Sputtered Si surface irradiated by metal cluster complex ions such as Os3(CO)12 and Ir4(CO)12

Yoshikazu Teranishi*, Kouji Kondou, Yukio Fujiwara, Hidehiko Nonaka, Toshiyuki Fujimoto, Shingo Ichimura, Misuhiro Tomita

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The surface sputtering of Si using a proto-type ion gun to utilize metal cluster complexes as ion source has been investigated in detail mainly using Auger spectroscopy and atomic force microscope. The Si surface was found to be successfully sputtered with a high sputtering yield and yet resulting in a reasonably smooth surface. However, the sputtered surface roughness behavior against the incident angle of the ion beam show strong dependence to the accelerating energy of the cluster ions, which could be explained by the balance between the sputtering effect and deposition of ions themselves.

本文言語English
ページ(範囲)670-676
ページ数7
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
257
1-2 SPEC. ISS.
DOI
出版ステータスPublished - 2007 4月 1
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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