ST-quartz/LiTaO3 direct bonding using SiO2 amorphous layers with VUV/O3 pre-treatment for a novel 5G surface acoustic wave device

Haruka Suzaki, Hiroyuki Kuwae, Akiko Okada, Bo Ma, Shuichi Shoji, Jun Mizuno

研究成果: Conference contribution

1 引用 (Scopus)

抄録

This paper describes a novel ST-cut quartz (ST-quartz)/LiTaO3 (LT) direct bonding for surface acoustic wave (SAW) devices of next 5G mobile communication. The ST-quartz and LT were bonded to fabricate temperature compensated piezoelectric substrates using amorphous SiO2 (α-SiO2) intermediate layers. The α-SiO2 thin layer was prepared on each substrate by ion beam sputtering (IBS) to realize highly active bonding interfaces and treated by vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3). Then they were bonded under pressure of 5 MPa at 200 °C for 15 min in 100 kPa vacuum atmosphere. The tensile strength of 2.9 MPa was achieved in α-SiO2 substrate which is six times stronger than other samples; without intermediate layers or VUV/O3 pre-treatment. In addition, VUV/O3 bonding was compared with Mega-sonic bonding. VUV/O3 treated sample with AIB method slightly increase the bonding strength and achieved the same level of Mega-sonic bonding sample with AIB. Hence, it is indicated that AIB method could prepare the considerably activated surface even using low vacuum condition and affect effectively to hetero-monocrystalline bonding. This result suggested the proposed ST-quartz/LT direct bonding is a promising technique for future 5G SAW devices.

元の言語English
ホスト出版物のタイトル2016 International Conference on Electronics Packaging, ICEP 2016
出版者Institute of Electrical and Electronics Engineers Inc.
ページ443-446
ページ数4
ISBN(電子版)9784904090176
DOI
出版物ステータスPublished - 2016 6 7
イベント2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan
継続期間: 2016 4 202016 4 22

Other

Other2016 International Conference on Electronics Packaging, ICEP 2016
Japan
Hokkaido
期間16/4/2016/4/22

Fingerprint

Acoustic surface wave devices
Quartz
Vacuum
Substrates
lithium tantalate oxide
Ion beams
Sputtering
Tensile strength
Gases
Irradiation
Oxygen
Communication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Mechanics of Materials

これを引用

Suzaki, H., Kuwae, H., Okada, A., Ma, B., Shoji, S., & Mizuno, J. (2016). ST-quartz/LiTaO3 direct bonding using SiO2 amorphous layers with VUV/O3 pre-treatment for a novel 5G surface acoustic wave device. : 2016 International Conference on Electronics Packaging, ICEP 2016 (pp. 443-446). [7486865] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP.2016.7486865

ST-quartz/LiTaO3 direct bonding using SiO2 amorphous layers with VUV/O3 pre-treatment for a novel 5G surface acoustic wave device. / Suzaki, Haruka; Kuwae, Hiroyuki; Okada, Akiko; Ma, Bo; Shoji, Shuichi; Mizuno, Jun.

2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 443-446 7486865.

研究成果: Conference contribution

Suzaki, H, Kuwae, H, Okada, A, Ma, B, Shoji, S & Mizuno, J 2016, ST-quartz/LiTaO3 direct bonding using SiO2 amorphous layers with VUV/O3 pre-treatment for a novel 5G surface acoustic wave device. : 2016 International Conference on Electronics Packaging, ICEP 2016., 7486865, Institute of Electrical and Electronics Engineers Inc., pp. 443-446, 2016 International Conference on Electronics Packaging, ICEP 2016, Hokkaido, Japan, 16/4/20. https://doi.org/10.1109/ICEP.2016.7486865
Suzaki H, Kuwae H, Okada A, Ma B, Shoji S, Mizuno J. ST-quartz/LiTaO3 direct bonding using SiO2 amorphous layers with VUV/O3 pre-treatment for a novel 5G surface acoustic wave device. : 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 443-446. 7486865 https://doi.org/10.1109/ICEP.2016.7486865
Suzaki, Haruka ; Kuwae, Hiroyuki ; Okada, Akiko ; Ma, Bo ; Shoji, Shuichi ; Mizuno, Jun. / ST-quartz/LiTaO3 direct bonding using SiO2 amorphous layers with VUV/O3 pre-treatment for a novel 5G surface acoustic wave device. 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 443-446
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abstract = "This paper describes a novel ST-cut quartz (ST-quartz)/LiTaO3 (LT) direct bonding for surface acoustic wave (SAW) devices of next 5G mobile communication. The ST-quartz and LT were bonded to fabricate temperature compensated piezoelectric substrates using amorphous SiO2 (α-SiO2) intermediate layers. The α-SiO2 thin layer was prepared on each substrate by ion beam sputtering (IBS) to realize highly active bonding interfaces and treated by vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3). Then they were bonded under pressure of 5 MPa at 200 °C for 15 min in 100 kPa vacuum atmosphere. The tensile strength of 2.9 MPa was achieved in α-SiO2 substrate which is six times stronger than other samples; without intermediate layers or VUV/O3 pre-treatment. In addition, VUV/O3 bonding was compared with Mega-sonic bonding. VUV/O3 treated sample with AIB method slightly increase the bonding strength and achieved the same level of Mega-sonic bonding sample with AIB. Hence, it is indicated that AIB method could prepare the considerably activated surface even using low vacuum condition and affect effectively to hetero-monocrystalline bonding. This result suggested the proposed ST-quartz/LT direct bonding is a promising technique for future 5G SAW devices.",
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AB - This paper describes a novel ST-cut quartz (ST-quartz)/LiTaO3 (LT) direct bonding for surface acoustic wave (SAW) devices of next 5G mobile communication. The ST-quartz and LT were bonded to fabricate temperature compensated piezoelectric substrates using amorphous SiO2 (α-SiO2) intermediate layers. The α-SiO2 thin layer was prepared on each substrate by ion beam sputtering (IBS) to realize highly active bonding interfaces and treated by vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3). Then they were bonded under pressure of 5 MPa at 200 °C for 15 min in 100 kPa vacuum atmosphere. The tensile strength of 2.9 MPa was achieved in α-SiO2 substrate which is six times stronger than other samples; without intermediate layers or VUV/O3 pre-treatment. In addition, VUV/O3 bonding was compared with Mega-sonic bonding. VUV/O3 treated sample with AIB method slightly increase the bonding strength and achieved the same level of Mega-sonic bonding sample with AIB. Hence, it is indicated that AIB method could prepare the considerably activated surface even using low vacuum condition and affect effectively to hetero-monocrystalline bonding. This result suggested the proposed ST-quartz/LT direct bonding is a promising technique for future 5G SAW devices.

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