Stable, efficient p-type doping of graphene by nitric acid

Lorenzo D'Arsié, Santiago Esconjauregui, Robert S. Weatherup, Xingyi Wu, William E. Arter, Hisashi Sugime, Cinzia Cepek, John Robertson

研究成果: Article

28 引用 (Scopus)

抄録

We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance after vacuum annealing up to 300 °C. The optimized HNO3 doping conditions yield sheet resistances as low as 180 Ω sq.−1, which is significantly more stable under vacuum annealing than previously reported values. Raman and photoemission spectroscopy suggest that this stable graphene doping occurs by a bi-modal mechanism. Under mild conditions the dopants are weakly bonded to graphene, but at high acid temperatures and concentrations, the doping is higher and more stable upon post-doping annealing, without causing significant lattice damage. This work shows that large, stable hole concentrations can be induced by transfer doping in graphene.

元の言語English
ページ(範囲)113185-113192
ページ数8
ジャーナルRSC Advances
6
発行部数114
DOI
出版物ステータスPublished - 2016
外部発表Yes

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Nitric Acid
Graphite
Nitric acid
Graphene
Doping (additives)
Sheet resistance
Annealing
Vacuum
Hole concentration
Photoelectron spectroscopy
Raman spectroscopy
Monolayers
Temperature
Acids

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

これを引用

D'Arsié, L., Esconjauregui, S., Weatherup, R. S., Wu, X., Arter, W. E., Sugime, H., ... Robertson, J. (2016). Stable, efficient p-type doping of graphene by nitric acid. RSC Advances, 6(114), 113185-113192. https://doi.org/10.1039/c6ra23727d

Stable, efficient p-type doping of graphene by nitric acid. / D'Arsié, Lorenzo; Esconjauregui, Santiago; Weatherup, Robert S.; Wu, Xingyi; Arter, William E.; Sugime, Hisashi; Cepek, Cinzia; Robertson, John.

:: RSC Advances, 巻 6, 番号 114, 2016, p. 113185-113192.

研究成果: Article

D'Arsié, L, Esconjauregui, S, Weatherup, RS, Wu, X, Arter, WE, Sugime, H, Cepek, C & Robertson, J 2016, 'Stable, efficient p-type doping of graphene by nitric acid', RSC Advances, 巻. 6, 番号 114, pp. 113185-113192. https://doi.org/10.1039/c6ra23727d
D'Arsié L, Esconjauregui S, Weatherup RS, Wu X, Arter WE, Sugime H その他. Stable, efficient p-type doping of graphene by nitric acid. RSC Advances. 2016;6(114):113185-113192. https://doi.org/10.1039/c6ra23727d
D'Arsié, Lorenzo ; Esconjauregui, Santiago ; Weatherup, Robert S. ; Wu, Xingyi ; Arter, William E. ; Sugime, Hisashi ; Cepek, Cinzia ; Robertson, John. / Stable, efficient p-type doping of graphene by nitric acid. :: RSC Advances. 2016 ; 巻 6, 番号 114. pp. 113185-113192.
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