Stable, efficient p-type doping of graphene by nitric acid

Lorenzo D'Arsié, Santiago Esconjauregui, Robert S. Weatherup, Xingyi Wu, William E. Arter, Hisashi Sugime, Cinzia Cepek, John Robertson

研究成果: Article

30 引用 (Scopus)

抜粋

We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance after vacuum annealing up to 300 °C. The optimized HNO3 doping conditions yield sheet resistances as low as 180 Ω sq.−1, which is significantly more stable under vacuum annealing than previously reported values. Raman and photoemission spectroscopy suggest that this stable graphene doping occurs by a bi-modal mechanism. Under mild conditions the dopants are weakly bonded to graphene, but at high acid temperatures and concentrations, the doping is higher and more stable upon post-doping annealing, without causing significant lattice damage. This work shows that large, stable hole concentrations can be induced by transfer doping in graphene.

元の言語English
ページ(範囲)113185-113192
ページ数8
ジャーナルRSC Advances
6
発行部数114
DOI
出版物ステータスPublished - 2016
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

これを引用

D'Arsié, L., Esconjauregui, S., Weatherup, R. S., Wu, X., Arter, W. E., Sugime, H., Cepek, C., & Robertson, J. (2016). Stable, efficient p-type doping of graphene by nitric acid. RSC Advances, 6(114), 113185-113192. https://doi.org/10.1039/c6ra23727d