Stable, efficient p-type doping of graphene by nitric acid

Lorenzo D'Arsié*, Santiago Esconjauregui, Robert S. Weatherup, Xingyi Wu, William E. Arter, Hisashi Sugime, Cinzia Cepek, John Robertson

*この研究の対応する著者

研究成果: Article査読

45 被引用数 (Scopus)

抄録

We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance after vacuum annealing up to 300 °C. The optimized HNO3 doping conditions yield sheet resistances as low as 180 Ω sq.−1, which is significantly more stable under vacuum annealing than previously reported values. Raman and photoemission spectroscopy suggest that this stable graphene doping occurs by a bi-modal mechanism. Under mild conditions the dopants are weakly bonded to graphene, but at high acid temperatures and concentrations, the doping is higher and more stable upon post-doping annealing, without causing significant lattice damage. This work shows that large, stable hole concentrations can be induced by transfer doping in graphene.

本文言語English
ページ(範囲)113185-113192
ページ数8
ジャーナルRSC Advances
6
114
DOI
出版ステータスPublished - 2016
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)

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