Stable phase boundaries between the 7 × 7 and the 5 × 2 Au structures on a Si(111) surface studied by high-temperature STM

Tsuyoshi Hasegawa, Shigeyuki Hosoki, Katsumichi Yagi

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Phase boundaries between the 7 × 7 and the 5 × 2 Au structures on a Si(111) surface, which were located along the two-fold direction of the 5 × 2 structure, were dynamically studied using high-temperature scanning tunneling microscopy (STM) during Au deposition at 500°C. Two types of stable phase boundaries were observed depending on the growth direction of the 5 × 2 domain. The stable phase boundaries had adatoms of the unfaulted half at the edge of the 7 × 7 side. The formation of an unstable phase boundary was quickly followed by the growth of new rows of the 5 × 2 structure next to the boundary which formed a stable phase boundary. These results suggest that the stacking fault of the 7 × 7 structure at a phase boundary is unstable.

本文言語English
ページ(範囲)L295-L299
ジャーナルSurface Science
355
1-3
DOI
出版ステータスPublished - 1996 6 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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