Stacking fault formation in highly nitrogen-doped 4H-SiC substrates with different surface preparation conditions

M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro, H. Tsuge, T. Aigo, T. Hoshino, K. Tatsumi

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substrates during high temperature treatment has been investigated in terms of the surface preparation conditions of substrates. Substrates with a relatively large surface roughness showed a resistivity increase after annealing at 1100°C, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of the substrates, which indicates that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates. In this regard, mechano-chemically polished (MCP) substrates with a minimum surface roughness (< 0.3 nm) exhibited no resistivity increase and very few stacking faults after annealing even when the nitrogen concentration of the substrates exceeded 1×1019 cm-3.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
編集者Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
出版社Trans Tech Publications Ltd
ページ341-344
ページ数4
ISBN(印刷版)9780878493579
出版ステータスPublished - 2009 1 1
外部発表はい
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
継続期間: 2007 10 142007 10 19

出版物シリーズ

名前Materials Science Forum
600-603
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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