Stacking fault formation in highly nitrogen-doped 4H-SiC substrates with different surface preparation conditions

Engineering & Materials Science

• Stacking faults 100%
• Nitrogen 64%
• Substrates 49%
• Annealing 17%
• Surface roughness 14%
• Single crystals 10%
• Nucleation 9%

Physics & Astronomy

• crystal defects 69%
• nitrogen 51%
• preparation 51%
• surface roughness 14%
• electrical resistivity 11%
• annealing 10%
• occurrences 7%
• nucleation 6%
• expansion 5%
• single crystals 5%

Chemical Compounds

• Stacking Fault 95%
• Surface Roughness 28%
• Surface 22%
• Annealing 22%
• Nucleation 11%
• Single Crystalline Solid 9%
• Nitrogen 8%