Standard Gibbs energies of formation of SiCl2(g) and SiCl3(g) species at 1000 to 1300 K

Masaki Kanamori*, Masahito Sugiura, Akio Fuwa

*この研究の対応する著者

    研究成果: Article査読

    1 被引用数 (Scopus)

    抄録

    The equilibria in the Si(s)-Cl2(g) system have been studied at temperature from 1000 to 1300 K using a transpiration reactor. The equilibria are considered among Si(s)-Cl2(g)-SiCl2(g)-SiCl3(g)-SiCl4(g). The standard Gibbs energies of formation for the species of SiCl2(g) and SiCl3(g) species at these temperatures are determined simultaneously, where these subchloride species coexist in appreciable quantities with SiCl4 in the gas phase at these temperatures, as follows: SiCl2(g): ΔG°f·SiCl(2)·T(1000-1300 K)=-185.0-2.32×10-2 T kJ·mol-1 SiCl3(g): ΔG°f·SiCl(3)·T(1000-1300 K)=-401.1+3.28×10-2 T kJ·mol-1

    本文言語English
    ページ(範囲)156-163
    ページ数8
    ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    59
    2
    出版ステータスPublished - 1995 2

    ASJC Scopus subject areas

    • 金属および合金

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