Statistical analysis of dynamic-random-access-memory data-retention characteristics

Atsushi Hiraiwa, Makoto Ogasawara, Nobuyoshi Natsuaki, Yutaka Itoh, Hidetoshi Iwai

研究成果: Conference contribution

抄録

Charges stored in a memory cell of a dynamic random access memory are lost by the Shockley-Read-Hall (SRH) current that is generated at carrier traps in the space-charge-region (SCR) of a junction. Magnitude of the SRH current is determined by the trap levels that are distributed not only among cells, but also within a cell. This traplevel distribution causes the temperature-dependent variation in the data retention times. The SRH current is enhanced by an SCR field, and the distribution of the field among cells also increases the variation in the retention times. Variation in the number of traps, on the other hand, contributes only slightly to the retention-time distribution. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics.

本文言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
ページ2-9
ページ数8
3212
DOI
出版ステータスPublished - 1997
外部発表はい
イベントMicroelectronic Device Technology - Austin, TX, United States
継続期間: 1997 10 11997 10 1

Other

OtherMicroelectronic Device Technology
国/地域United States
CityAustin, TX
Period97/10/197/10/1

ASJC Scopus subject areas

  • 応用数学
  • コンピュータ サイエンスの応用
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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